Click here to purchase
IEC 63068-2:2019(E) provides definitions and guidance in use of optical inspection for detecting as-grown defects in commercially available 4H-SiC (Silicon Carbide) epitaxial wafers. Additionally, this document exemplifies optical images to enable the detection and categorization of the defects for SiC homoepitaxial wafers. This document deals with a non-destructive test method for the defects so that destructive methods such as preferential etching are out of scope in this document.
Product Details
- Edition:
- 1.0
- Published:
- 01/30/2019
- Number of Pages:
- 25
- File Size:
- 1 file , 3 MB